论文标题
拓扑半法中杂质和格子缺陷的量子效应
Quantum Effects of Impurities and Lattice Defects in Topological Semimetals
论文作者
论文摘要
拓扑半学是一类新型的三维（3D）电子相，在费米水平上具有拓扑保护的锥形带触摸。这些带触摸点是动量空间中浆果曲率的单孔，并有效地实现（3+1） - 维叶基因作为新兴的准粒子。这样的功能对扰动是强大的，但对它们的扰动并不完全不敏感。在本论文中，我们探讨了无序Weyl半含量（WSM）的肥沃地面，最著名的是通过分析现场随机场，随机平滑电势区域，类似点样的标量杂质以及其电子结构中的晶格点 - 缺陷的影响。
Topological semimetals are a class of novel three-dimensional (3D) electronic phases that feature topologically protected conical band-touchings at the Fermi level. These band-touching points are monopoles of Berry curvature in momentum space and effectively realize (3+1)-dimensional Weyl fermions as emergent quasiparticles. Such features are robust to perturbations but not completely insensitive to them. In this thesis, we explore the yet fertile ground of disordered Weyl semimetals (WSMs), most notably by analysing the effects of on-site random fields, random smooth potential regions, point-like scalar impurities, and lattice point-defects in their electronic structure and electrodynamic properties.
