论文标题
基于结核病/联合新闻的纳米级磁性隧道连接的光学切换
Optical Switching in Tb/Co-Multilayer Based Nanoscale Magnetic Tunnel Junctions
论文作者
论文摘要
磁性隧道连接（MTJ）是磁性记忆设备的基本单位。对于高功率和低功率数据存储和处理应用程序，超短激光脉冲的快速逆转非常重要。我们通过组合光学写作和电气读出方法来证明基于结核病/Comultayer的纳米级MTJ的光学切换。 90 FS长的激光脉冲切换了存储层（SL）的磁化。 SL和参考层（RL）之间的磁阻的变化在整个隧道屏障上进行电探测。单发切换可以通过将细胞直径从300 nm变为20 nm来证明。各向异性，静电耦合和开关概率表现出细胞大小的依赖性。通过适当的激光和磁场的关联，可以实现高电阻和低电阻状态之间的连续交换。使用磁光kerr效应技术探测连续膜中的开关动力学。我们的实验发现为对超快自旋设备的兴趣不断增长提供了强烈的支持。
Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrashort laser pulse is extremely important. We demonstrate optical switching of Tb/Comultilayer-based nanoscale MTJs by combining optical writing and electrical read-out methods. A 90 fs-long laser pulse switches the magnetization of the storage layer (SL). The change in magnetoresistance between the SL and a reference layer (RL) is probed electrically across the tunnel barrier. Single-shot switching is demonstrated by varying the cell diameter from 300 nm to 20 nm. The anisotropy, magnetostatic coupling, and switching probability exhibit cell-size dependence. By suitable association of laser fluence and magnetic field, successive commutation between high-resistance and low-resistance states is achieved. The switching dynamics in a continuous film is probed with the magneto-optical Kerr effect technique. Our experimental findings provide strong support for the growing interest in ultrafast spintronic devices.
