论文标题
4H-SIC中SI空位中心的声学诱导的自旋共振的鉴定
Identification of acoustically induced spin resonances of Si vacancy centers in 4H-SiC
论文作者
论文摘要
4H-SIC中的硅空缺（$ \ mathrm {v} _ \ mathrm {si} $）的长期和光学上可寻址的旋转状态使它们在量子通信和感知方面有希望。这些颜色中心可以在六H-SIC宿主的六角形（V1）和立方（V2）局部晶体学环境中创建。尽管V2中心的自旋可以通过室温下的光学检测到的磁共振有效地操纵，但迄今为止，对低温温度以上的V1中心的自旋控制仍然难以捉摸。在这里，我们表明，表面声波的动态应变可以克服这种限制，并有效地激发V1的磁共振中心，直至室温。基于V1中心的声学诱导的自旋谐振的宽度和温度依赖性，我们将它们归因于激发态以旋转级别的过渡。两种$ \ mathrm {v} _ \ mathrm {si} $中心在其激发状态下的声音旋转控制为基于旋转 - optomechanics的量子技术应用程序打开了新的方法。
The long-lived and optically addressable spin states of silicon vacancies ($\mathrm{V}_\mathrm{Si}$) in 4H-SiC make them promising qubits for quantum communication and sensing. These color centers can be created in both the hexagonal (V1) and in the cubic (V2) local crystallographic environments of the 4H-SiC host. While the spin of the V2 center can be efficiently manipulated by optically detected magnetic resonance at room temperature, spin control of the V1 centers above cryogenic temperatures has so far remained elusive. Here, we show that the dynamic strain of surface acoustic waves can overcome this limitation and efficiently excite magnetic resonances of V1 centers up to room temperature. Based on the width and temperature dependence of the acoustically induced spin resonances of the V1 centers, we attribute them to transitions between spin sublevels in the excited state. The acoustic spin control of both kinds of $\mathrm{V}_\mathrm{Si}$ centers in their excited states opens new ways for applications in quantum technologies based on spin-optomechanics.
