论文标题

强大的室温散装非线性大厅效应在旋转谷物锁定的迪拉克材料中

Strong Room-Temperature Bulk Nonlinear Hall Effect in a Spin-Valley Locked Dirac Material

论文作者

Min, Lujin, Tan, Hengxin, Xie, Zhijian, Miao, Leixin, Zhang, Ruoxi, Lee, Seng Huat, Gopalan, Venkatraman, Liu, Chaoxing, Alem, Nasim, Yan, Binghai, Mao, Zhiqiang

论文摘要

非线性霍尔效应(NLHE)是一种具有广泛应用前景的新型Hall效应。实用的设备应用需要在室温(RT)下进行强大的NLHE。但是,先前报道的NLHE都是低温现象,除了Tairte4的表面NLHE。大量RT NLHE高度期望,因为它能够产生大型光电流。在这里,我们显示了BAMNSB2中的旋转谷锁定的Dirac State可以在RT上产生强大的NLHE。在显微镜设备中,我们观察到固有的NLHE的典型特征,即,横向霍尔电压四尺度与纵向电流相规,因为将电流应用于浆果曲率偶极子方向。此外,我们还展示了非线性霍尔设备在无线微波检测和频率加倍方面的功能。这些发现将耦合的旋转和山谷物理学从2D系统扩展到3D系统,并为探索大量NLHE的应用奠定了基础。

Nonlinear Hall effect (NLHE) is a new type of Hall effect with wide application prospects. Practical device applications require strong NLHE at room temperature (RT). However, previously reported NLHEs are all low-temperature phenomena except for the surface NLHE of TaIrTe4. Bulk RT NLHE is highly desired due to its ability to generate large photocurrent. Here, we show the spin-valley locked Dirac state in BaMnSb2 can generate a strong bulk NLHE at RT. In the microscale devices, we observe the typical signature of an intrinsic NLHE, i.e. the transverse Hall voltage quadratically scales with the longitudinal current as the current is applied to the Berry curvature dipole direction. Furthermore, we also demonstrate our nonlinear Hall device's functionality in wireless microwave detection and frequency doubling. These findings broaden the coupled spin and valley physics from 2D systems into a 3D system and lay a foundation for exploring bulk NLHE's applications.

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