论文标题
磁性隧道连接中铁磁绝缘屏障的影响
Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions
论文作者
论文摘要
我们研究了磁性隧道连接（MTJ）的自旋依赖性电导，包括铁磁绝缘屏障。 MTJ由两个半金属的铁磁LA2/3SR1/3MNO3（LSMO）锰矿作为电极和LA2NIMNO6（LNMO）双钙钛矿作为铁磁绝缘壁。连接的电阻不仅在很大程度上取决于LSMO电极中磁矩的方向，而且还取决于LNMO屏障的磁化方向相对于LSMO的磁化。在10 K时，隧道磁路术的比率达到24％的最大值，并随温度降低，直到它完全消失在280 K时LNMO的临界温度以上。使用一种机制来描述该隧道过程，该机制涉及空的EG EG EG EG lnmo屏障状态，其LNMO屏障的表现为旋转器。磁性绝缘屏障是在基于氧化物的异质结构中实现室温磁磁性的有趣途径。
We investigate spin-dependent conductance across a magnetic tunnel junction (MTJ) including a ferromagnetic insulating barrier. The MTJ consists of two half-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes and La2NiMnO6 (LNMO) double perovskite as a ferromagnetic insulating barrier. The resistance of the junction is strongly dependent not only on the orientation of the magnetic moments in LSMO electrodes, but also on the direction of the magnetization of the LNMO barrier with respect to that of LSMO. The ratio of tunnel magnetoresistance reaches a maximum value of 24% at 10 K, and it decreases with temperature until it completely disappears above the critical temperature of LNMO at 280 K. The tunneling process is described using a mechanism which involves both empty and filled eg states of the LNMO barrier acting as a spin-filter. A magnetic insulating barrier is an interesting path for achieving room temperature magnetoresistance in oxide-based heterostructures.
