论文标题
在扭曲的很少和多层CVD石墨烯中皱纹和弯曲：高密度的边缘模式影响拉曼光谱
Wrinkling and crumpling in twisted few and multilayer CVD graphene: High density of edge modes influencing Raman spectra
论文作者
论文摘要
与石墨烯材料相关的拉曼光谱的丰富性和复杂性是数年到几十年来建立的，其中包括：众所周知的g，d，2d，...频段以及大量与无序行为，兴奋剂，压力，晶体取向或堆叠信息有关的较弱的频段。本文中，我们报告了如何使用大量少数和多层石墨烯在拉曼光谱中检测碎屑效应。主要发现是这些碎屑可以像扭曲的BI层石墨烯一样增强G带强度。我们通过报告由皱纹造成的表面缺陷来更新了D上的G频段强度比与G频段宽度图。此外，我们首次报告了存在于633 nm处的23个共鸣的其他频段。我们将它们归因于高密度皱纹形成的边缘模式。我们使用拉曼图（2D频段与G频段位置和宽度）来获取有关堆叠层的定性信息。
Richness and complexity of Raman spectra related to graphene materials is established from years to decades, with, among others: the well-known G, D, 2D,... bands plus a plethora of weaker bands related to disorder behavior, doping, stress, crystal orientation or stacking information. Herein, we report on how to detect crumpling effects in Raman spectra, using a large variety of few and multilayer graphene. The main finding is that these crumples enhance the G band intensity like it does with twisted bi layer graphene. We updated the D over G band intensity ratio versus G band width plot, which is generally used to disentangle point and linear defects origin, by reporting surface defects created by crumples. Moreover, we report for the first time on the existence 23 resonant additional bands at 633 nm. We attribute them to edge modes formed by high density of crumples. We use Raman plots (2D bands versus G band positions and widths) to gain qualitative information about the way layers are stacked.
