论文标题
Si/Sige量子点与芯片外锡谐振器之间的纵向耦合
Longitudinal coupling between a Si/SiGe quantum dot and an off-chip TiN resonator
论文作者
论文摘要
超导腔已成为测量量子点的自旋状态的关键工具。然而，到目前为止，很少有实验探索了点和空腔之间的纵向耦合，并且没有固态量子量子实验明确探测了“绝热”制度，其中purcell衰减得到了强烈抑制。在这里，我们报告了通过“ Flip-Chip”设计几何形状与高阻抗谐振器耦合到高阻抗谐振器的双量子点电荷量子的测量值。通过通过两个不同的通道将绝热的AC驱动器应用于Qubit，并研究量子能量能量破裂，间点隧道和驱动强度的影响，我们能够明确地确认值和空腔之间的纵向耦合，而Qubit则保持静态耦合。由于这种耦合与驱动振幅成正比，因此可以切换，因此它有可能成为量子实验中强大的新工具。
Superconducting cavities have emerged as a key tool for measuring the spin states of quantum dots. So far however, few experiments have explored longitudinal couplings between dots and cavities, and no solid-state qubit experiments have explicitly probed the "adiabatic" regime, where the Purcell decay is strongly suppressed. Here, we report measurements of a double-quantum-dot charge qubit coupled to a high-impedance resonator via a "flip-chip" design geometry. By applying an adiabatic ac drive to the qubit through two different channels, and studying the effects of qubit energy detuning, interdot tunneling, and driving strength, we are able to unequivocally confirm the presence of a longitudinal coupling between the qubit and cavity, while the qubit remains in its ground state. Since this coupling is proportional to the driving amplitude, and is therefore switchable, it has the potential to become a powerful new tool in qubit experiments.
