论文标题
在电动力防尘罩(EDS)应用中化学修饰的还原石墨烯(CMRGO)的性能
Performance of chemically modified reduced graphene oxide (CMrGO) in electrodynamic dust shield (EDS) applications
论文作者
论文摘要
电动力防尘屏蔽(EDS)技术是一种缓解尘埃策略,通常研究用于诸如光伏或热辐射器之类的应用,在这些应用中,表面的污垢可以降低性能。当前工作的目的是测试通过用热塑性高密度聚乙烯(HDPE)喷涂和融化化学改性的还原氧化石墨烯(CMRGO)痕迹而产生的图案化纳米复合EDS系统的性能。使用2相和3相构型测试了在高真空条件下(〜10-6 Torr)在高真空条件下(〜10-6 Torr)测试EDS性能的灰尘。未盖(裸露的)设备在2相和3相设计的中等电压(1000 V)处显示出有效的灰尘去除,但是由于电动放电引起的痕迹侵蚀了几次顺序测试后,设备的性能降低了。在用紫外线准分子灯照亮尘埃表面的同时,进行了进一步的测试,显示到达到最大清洁度所需的EDS电压降低了近50%的2相设备(粗糙的粗糙度为500 v,平滑为1000 V),而3台设备的应用不受UV的应用不受影响。用低密度聚乙烯(LDPE)限制CMRGO痕迹,消除了材料和设备降解的分解,但是需要较大的电压(3000 V)与紫外线照明相结合以从限制的设备中去除谷物。
Electrodynamic Dust Shield (EDS) technology is a dust mitigation strategy that is commonly studied for applications such as photovoltaics or thermal radiators where soiling of the surfaces can reduce performance. The goal of the current work was to test the performance of a patterned nanocomposite EDS system produced through spray-coating and melt infiltration of chemically modified reduced graphene oxide (CMrGO) traces with thermoplastic high-density polyethylene (HDPE). The EDS performance was tested for a dusting of lunar regolith simulant under high vacuum conditions (~10-6 Torr) using both 2-phase and 3-phase configurations. Uncapped (bare) devices showed efficient dust removal at moderate voltages (1000 V) for both 2-phase and 3-phase designs, but the performance of the devices degraded after several sequential tests due to erosion of the traces caused by electric discharges. Further tests carried out while illuminating the dust surface with a UV excimer lamp showed that the EDS voltage needed to reach the maximum cleanliness was reduced by almost 50% for the 2-phase devices (500 V minimum for rough and 1000 V for smooth), while the 3-phase devices were unaffected by the application of UV. Capping the CMrGO traces with low-density polyethylene (LDPE) eliminated breakdown of the materials and device degradation, but larger voltages (3000 V) coupled with UV illumination were required to remove the grains from the capped devices.