论文标题
人为堆叠的双层CVD石墨烯场效应晶体管的内在电压增强
Enhanced intrinsic voltage gain in artificially stacked bilayer CVD graphene field effect transistors
论文作者
论文摘要
我们报告了由大区域化学蒸气（CVD）石墨烯制造的双门，人为堆叠的双层石墨烯场效果晶体管（BIGFET）的电子传输。这些设备显示出当前饱和度的增强趋势，从而导致最小输出电导值降低。与单层石墨烯FET相比，这会改善设备的内在电压增益。我们采用最初为Bernal堆叠双层石墨烯FET（BSBGFET）开发的基于物理的紧凑模型来探索观察到的现象。电流饱和度的改善可能归因于通道中的电荷载体密度增加，因此由于载流子散射而导致的饱和速度降低。
We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current saturation, which leads to reduced minimum output conductance values. This results in improved intrinsic voltage gain of the devices when compared to monolayer graphene FETs. We employ a physics based compact model originally developed for Bernal stacked bilayer graphene FETs (BSBGFETs) to explore the observed phenomenon. The improvement in current saturation may be attributed to increased charge carrier density in the channel and thus reduced saturation velocity due to carrier-carrier scattering.
