论文标题
在石墨烯/过渡金属二进制二色质异质结构上调整界面纳米结构
Tailoring interfacial nanostructures at graphene/transition metal dichalcogenide heterostructures
论文作者
论文摘要
将二维（2D）Van der Waals（VDW）材料与非2D材料进行整合以实现综合二维异质结构具有创建超出现有材料超越现有材料的功能设备的潜力，并且长期以来一直是对材料科学界的追求。在这里，我们报告了单层/双层过渡金属二甲化合物（TMD）纳米结构的模式，该纳米结构具有纳米级别，可调尺寸和位于石墨烯/TMD异质结构界面的位置。我们的实验表明，可以使用扫描隧道显微镜光刻在界面的选定位置创建TMD纳米结构，更重要的是，可以通过合并相邻的TMD nanostrustures或进一步尾声来通过纳米级精确地合并纳米尺度上的界面TMD纳米结构的大小。明确观察到了界面纳米结构中从大量TMD中的六边形相位到单斜相相的结构相变，该结构在界面纳米结构中被明确观察到，该相位局部在石墨烯上局部引入了定义明确的静电电势。这些结果不仅可以在VDWS异质结构中创建高质量的图案P-N连接，而且还提供了一条新的途径来实现定制设计的混合二维异质结构。
Integration of two-dimensional (2D) van der Waals (vdWs) materials with non-2D materials to realize mixed-dimensional heterostructures has potential for creating functional devices beyond the reach of existing materials and has long been a pursuit of the material science community. Here we report the patterning of monolayer/bilayer transition metal dichalcogenide (TMD) nanostructures with nanometer-precision, tunable sizes and sites at interfaces of graphene/TMD heterostructures. Our experiments demonstrate that the TMD nanostructures can be created at selected positions of the interface using scanning tunneling microscope lithography and, more importantly, the sizes of the interfacial TMD nanostructures can be tuned with nanoscale precise by merging adjacent TMD nanostructures or by further tailoring. A structural phase transition from hexagonal phase in bulk TMD to monoclinic phase in the interfacial nanostructures is explicitly observed, which locally introduce well-defined electrostatic potentials on graphene. These results not only enable the creation of high-quality patterned p-n junctions in vdWs heterostructures, but also provide a new route to realize custom-designed mixed-dimensional heterostructures.
