论文标题
硅化硅化二极管的影响硅化二极管的影响电离系数
Study of impact ionization coefficients in silicon with Low Gain Avalanche Diodes
论文作者
论文摘要
已经对硅设备的影响电离进行了广泛的研究，并提出了一些用于定量描述电离系数的模型。我们评估了这些模型，以对低增益雪崩二极管（LGADS）的增益测量结果进行评估，并为优化的影响电离系数提供了新的参数化，以描述大量的实验数据。我们对5种不同类型的50μm$ thick lgads呈现基于脉冲IR激光的增益测量值，来自两个不同生产商（CNM和HPK）的温度范围从$ -15^oc $到$ 40^oc $。详细的TCAD设备模型是基于模拟人生掺杂曲线测量结果以及对测量C-V特征的设备模型的调整来构想的。从TCAD模拟中提取电场曲线，并用作对实验数据的影响电离模型参数的优化过程（最小二乘拟合）的输入。已经证明，新的参数化给出了所有测量数据和TCAD模拟之间的良好协议，而现有模型并未实现。最后，我们提供了一个误差分析，并比较针对现有模型的电子和孔冲击电离系数的获得值。
Impact ionization in silicon devices has been extensively studied and several models for a quantitative description of the impact ionization coefficients have been proposed. We evaluate those models against gain measurements on Low Gain Avalanche diodes (LGADs) and derive new parameterizations for the impact ionization coefficients optimized to describe a large set of experimental data. We present pulsed IR-laser based gain measurements on 5 different types of $50μm$-thick LGADs from two different producers (CNM and HPK) performed in a temperature range from $-15^oC$ to $40^oC$. Detailed TCAD device models are conceived based on SIMS doping profiles measurements and tuning of the device models to measured C-V characteristics. Electric field profiles are extracted from the TCAD simulations and used as input to an optimization procedure (least squares fit) of the impact ionization model parameters to the experimental data. It is demonstrated that the new parameterizations give a good agreement between all measured data and TCAD simulations which is not achieved with the existing models. Finally, we provide an error analysis and compare the obtained values for the electron and hole impact ionization coefficients against existing models.
