论文标题

半手拓扑超导体候选者yptbi的分子束外延

Molecular Beam Epitaxy of a Half-Heusler Topological Superconductor Candidate YPtBi

论文作者

Kim, Jiwoong, Fijalkowski, Kajetan M., Kleinlein, Johannes, Schumacher, Claus, Markou, Anastasios, Gould, Charles, Schreyeck, Steffen, Felser, Claudia, Molenkamp, Laurens W.

论文摘要

寻找拓扑超导性的促进了对结合拓扑和超导特性的材料的研究。半母亲化合物YPTBI似乎是一种材料,但是到目前为止,实验仅限于散装单晶,极大地限制了可用实验的范围。这使得无法研究该材料超导性的潜在拓扑性质。访问超导状态的详细信息的实验需要基于薄膜的复杂光刻结构。在这里,我们报告了使用Al2O3(0001)底物上的分子束外延生长的YPTBI(111)的高结晶质量外延薄膜(111)。观察到稳健的超导状态,其临界温度和临界场均与先前报道的散装晶体一致。此外,我们发现Alox封盖充分保护样品表面免于降解以进行适当的光刻。我们的结果铺平了通往高级光刻结构的发展,这将允许探索YPTBI中超导性的潜在拓扑性质。

The search for topological superconductivity has motivated investigations into materials that combine topological and superconducting properties. The half-Heusler compound YPtBi appears to be such a material, however experiments have thus far been limited to bulk single crystals, drastically limiting the scope of available experiments. This has made it impossible to investigate the potential topological nature of the superconductivity in this material. Experiments to access details about the superconducting state require sophisticated lithographic structures, typically based on thin films. Here we report on the establishment of high crystalline quality epitaxial thin films of YPtBi(111), grown using molecular beam epitaxy on Al2O3(0001) substrates. A robust superconducting state is observed, with both critical temperature and critical field consistent with that previously reported for bulk crystals. Moreover we find that AlOx capping sufficiently protects the sample surface from degradation to allow for proper lithography. Our results pave a path towards the development of advanced lithographic structures, that will allow the exploration of the potentially topological nature of superconductivity in YPtBi.

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