论文标题
硼掺杂对赫斯勒合金CO2FEAL的隧道磁力的影响
Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl
论文作者
论文摘要
基于Heusler合金的磁性隧道连接可能会提供高磁场，小型阻尼和快速开关。在这里，用二氧化碳作为铁磁电极的连接是通过室温溅射在Si/SiO2底物上制造的。发现硼在二氧化碳中的掺杂对连接的结构，磁和运输特性具有很大的积极影响，并具有降低的界面粗糙度和大量改进的隧道磁磁性。在低温下退火的样品中还观察到了两级磁阻，这被认为与杂质的隧道屏障的回忆作用有关。
Heusler alloys based magnetic tunnel junctions can potentially provide high magnetoresistance, small damping and fast switching. Here junctions with Co2FeAl as a ferromagnetic electrode are fabricated by room temperature sputtering on Si/SiO2 substrates. The doping of Boron in Co2FeAl is found to have a large positive impact on the structural, magnetic and transport properties of the junctions, with a reduced interfacial roughness and substantial improved tunneling magnetoresistance. A two-level magnetoresistance is also observed in samples annealed at low temperature, which is believed to be related to the memristive effect of the tunnel barrier with impurities.
