论文标题
与CVD石墨烯对各种金属电极的接触电阻研究
Contact Resistance Study of Various Metal Electrodes with CVD Graphene
论文作者
论文摘要
在这项研究中，研究了各种金属与沉积化学蒸气（CVD）单层石墨烯的接触抗性。转移长度方法（TLM）结构具有变化的宽度，并且在环境空气和真空条件下已经制造并进行了电动之间的分离。电触点是用五种金属制成的：黄金，镍，镍/金，钯和铂/金。观察到石墨烯和金之间的接触电阻的最低值为92Ωμm，在真空吸真空的施加后门偏置下从后门控件中提取。与在环境条件下进行的测量相比，在真空下进行的测量显示了较大的接触电阻值。加工后在450°C下在Argon-95％ /氢-5％的大气中退火1小时导致降低接触电阻值，这归因于金属和石墨烯之间粘附的增强。这项工作中介绍的结果为高性能基于石墨烯的电子设备的潜在接触工程提供了概述。
In this study, the contact resistance of various metals to chemical vapour deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM) structures with varying widths and separation between contacts have been fabricated and electrically characterized in ambient air and vacuum condition. Electrical contacts are made with five metals: gold, nickel, nickel/gold, palladium and platinum/gold. The lowest value of 92 Ωμm is observed for the contact resistance between graphene and gold, extracted from back-gated devices at an applied back-gate bias of -40 V. Measurements carried out under vacuum show larger contact resistance values when compared with measurements carried out in ambient conditions. Post processing annealing at 450°C for 1 hour in argon-95% / hydrogen-5% atmosphere results in lowering the contact resistance value which is attributed to the enhancement of the adhesion between metal and graphene. The results presented in this work provide an overview for potential contact engineering for high performance graphene-based electronic devices.
