论文标题
石墨烯 - 硅二极管的冲锋
Charge Crowding in Graphene-Silicon Diodes
论文作者
论文摘要
基于两三维（2d-3d）界面的纳米级电子设备的性能受到与外部电路相互连接的电气接触的显着影响。这项工作调查了在2d-3d欧姆接触的电荷传输效应，并与石墨烯/Si Schottky连接的热离子注入模型相结合。在这里，我们关注石墨烯 - 金属接触的内在特性，特别注意高电压下接触失败机理的性质。根据我们的发现，高度导电电气接触中严重的电流拥挤（CC）效应显着影响设备故障，可以通过空间改变接触特性和几何形状来减少。通过原子力，拉曼，扫描电子和能量色散X射线光谱镜，对材料降解的影响对材料降解的影响进行了系统的分析。我们的设备在更长的时间内承受高静电放电峰值，表现出高鲁棒性和操作稳定性。这项研究为在动态切换中未来派的芯片积分中的高度健壮和可靠的石墨烯/SI异质结构铺平了道路。我们使用的方法可以扩展到基于2D-3D接口的其他纳米级电子设备
The performance of nanoscale electronic devices based on a two-three dimensional (2D-3D) interface is significantly affected by the electrical contacts that interconnect these materials with external circuitry. This work investigates charge transport effects at the 2D-3D ohmic contact coupled with the thermionic injection model for graphene/Si Schottky junction. Here, w e focus on the intrinsic properties of graphene-metal contacts, paying particular attention to the nature of the contact failure mechanism under high electrical stress. According to our findings, severe current crowding (CC) effects in highly conductive electrical contact significantly affect device failure that can be reduced by spatially varying the contact properties and geometry. The impact of electrical breakdown on material degradation is systematically analyzed by atomic force, Raman, scanning electron, and energy dispersive X-ray spectroscopies. Our devices withstand high electrostatic discharge spikes over a longer period, manifesting high robustness and operational stability. This research paves the way towards a highly robust and reliable graphene/Si heterostructure in futuristic on-chip integration in dynamic switching. The methods we employed here can be extended for other nanoscale electronic devices based on 2D-3D interfaces
