论文标题
t'pr $ _ {1.3-x}的电子状态
Electronic State of T'-Pr$_{1.3-x}$La$_{0.7}$Ce$_x$CuO$_4$ ($x = 0.10$) Studied by Compton Scattering
论文作者
论文摘要
我们已经对电子掺杂的T'-cuprate PR1.3-XLA0.7CEXCUO4（x = 0.10）进行了康普顿散射测量，以研究还原对电子状态的还原作用。获得的结果表明，Zhang-rice单条带，CU3DX2-Y2轨道中的O2P轨道中的电子数量和Cu3D3Z2-R2轨道的数量通过还原通过退火增加。 CU3D3Z2-R2电子数量的增加表明，在生长的单晶中存在Cu3d3Z2-R2孔。这是光谱证据表明，如运输测量所暗示的那样，局部孔掺入了多余氧气周围的Cu3d3z2-R2轨道[T. T. Adachi等人，J。Phys。 Soc。 JPN。 82，063713（2013）]。
We have performed Compton scattering measurements on as-grown and reduced single crystals of the electron-doped T'-cuprate Pr1.3-xLa0.7CexCuO4 (x = 0.10) to investigate the effect of reduction annealing on the electronic state. The obtained results have revealed that the numbers of electrons in the O2p orbital in the Zhang-Rice singlet band, the Cu3dx2-y2 orbital, and the Cu3d3z2-r2 orbital are increased by reduction annealing. The increase in the number of Cu3d3z2-r2 electrons suggests the existence of Cu3d3z2-r2 holes in the as-grown single crystal. This is spectroscopic evidence of local hole doping into the Cu3d3z2-r2 orbital around the excess oxygen, as suggested by transport measurements [T. Adachi et al., J. Phys. Soc. Jpn. 82, 063713 (2013)].
