论文标题
下一代记忆和非常规计算的手性旋转纹理
Chiral Spin Textures for Next-Generation Memory and Unconventional Computing
论文作者
论文摘要
手性旋转纹理的实现 - 具有拓扑特性的无数独特的纳米级布置 - 为非挥发性纳米电子学的工程鲁棒性，能效和可扩展性元素提供了建立途径。特别是，在记忆，逻辑和非常规计算中的应用中，对当前引起的旋转纹理操纵进行了对纳米线赛道和基于隧道连接的设备的操纵。在本文中，我们绘制了有关旋转纹理进度以及用于开发的相关最新技术的背景。特别是，我们阐明了手性自旋纹理的竞争能量景观，例如天空和手性域壁，以调整其大小，密度和零视野稳定性。接下来，我们讨论自旋纹理现象学及其对由几何约束，间 - 线相互作用和热电作用产生的外在因素的反应。最后，我们揭示了有前途的手性旋转记忆和神经形态设备，并讨论了新兴的材料和设备工程机会。
The realization of chiral spin textures - comprising myriad distinct, nanoscale arrangements of spins with topological properties - has established pathways for engineering robust, energy-efficient and scalable elements for non-volatile nanoelectronics. Particularly, current-induced manipulation of spin textures in nanowire racetracks and tunnel junction based devices are actively investigated for applications in memory, logic and unconventional computing. In this article, we paint a background on the progress of spin textures, as well as the relevant state-of-the-art techniques used for their development. In particular, we clarify the competing energy landscape of chiral spin textures, such as skyrmions and chiral domain walls, to tune their size, density and zero-field stability. Next, we discuss the spin texture phenomenology and their response to extrinsic factors arising from geometric constraints, inter-wire interactions and thermal-electrical effects. Finally, we reveal promising chiral spintronic memory and neuromorphic devices, and discuss emerging material and device engineering opportunities.
