论文标题

SRTIO3/latio3/srtio3异质结构中的工程杂交筛选和非零浆果阶段

Engineered Kondo screening and nonzero Berry phase in SrTiO3/LaTiO3/SrTiO3 heterostructures

论文作者

Yang, Fang, Wang, Zhenzhen, Liu, Yonghe, Yang, Shuai, Yu, Ze, An, Qichang, Ding, Zhaoqing, Meng, Fanqi, Cao, Yanwei, Zhang, Qinghua, Gu, Lin, Liu, Miao, Li, Yongqing, Guo, Jiandong, Liu, Xiaoran

论文摘要

控制氧化物界面处的局部自旋和巡回电子之间的相互作用会导致外来磁性状态。在这里,我们设计了SRTIO3/LATIO3/SRTIO3异质结构,其latio3层(N单层)厚度变化,以研究二维电子气体系统中的磁相互作用。当LatiO3层相当薄(n = 2,10)时,异质结构表现出显着的丘陵效应,表现出际电子和界面处的局部磁矩之间的强烈相互作用,而当n = 20时,n = 20时,近nikov-de iS thin prestiii exeriial then prestiii easer easer easer easer exerii exerii exerii exerii exerii exerii exerii exerii exerii exerii exerii exerii easer seperiii exerii sepire berys均可在(n = 2,10),在较厚的Latio3层(n = 20)的异质结构中不存在。观察到的现象始终被解释是由于界面分裂和对称性破坏的结果,这是由于界面Rashba旋转轨道耦合与异质结构中的磁有序之间的相互作用所致。我们的发现为探索和操纵复杂氧化物界面处的非平凡电子带结构提供了途径。

Controlling the interplay between localized spins and itinerant electrons at the oxide interfaces can lead to exotic magnetic states. Here we devise SrTiO3/LaTiO3/SrTiO3 heterostructures with varied thickness of the LaTiO3 layer (n monolayers) to investigate the magnetic interactions in the two-dimensional electron gas system. The heterostructures exhibit significant Kondo effect when the LaTiO3 layer is rather thin (n = 2, 10), manifesting the strong interaction between the itinerant electrons and the localized magnetic moments at the interfaces, while the Kondo effect is greatly inhibited when n = 20. Notably, distinct Shubnikov-de Haas oscillations are observed and a nonzero Berry phase of π is extracted when the LaTiO3 layer is rather thin (n = 2, 10), which is absent in the heterostructure with thicker LaTiO3 layer (n = 20). The observed phenomena are consistently interpreted as a result of sub-band splitting and symmetry breaking due to the interplay between the interfacial Rashba spin-orbit coupling and the magnetic orderings in the heterostructures. Our findings provide a route for exploring and manipulating nontrivial electronic band structures at complex oxide interfaces.

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