论文标题
电子扩散引起的山谷大厅的效应和六角形2D DIRAC单层材料中的非线性Galvanodiffusive Transport
Electron diffusion induced valley Hall effect and nonlinear galvanodiffusive transport in hexagonal 2D Dirac monolayer materials
论文作者
论文摘要
理论上在二维狄拉克材料中检查扩散电流，例如过渡金属二甲植物（TMD）家族的材料。如果电子驱动力不是电场，而是样品中电子密度分布的梯度，则横向效应是山谷大厅（VHE）（VHE）（VHE）的类似物（VHE）和Photogalvanic（PGE）转运现象。后者可以通过有限大小的激光斑或其他材料注入电子。假设各向异性电子偏 - 范围偏差偏斜散射，我们发展了扩散VHE效应的理论。假设TMD单层中电子谷的三角翘曲各向异性，则分析由较高的电子密度衍生物引起的电子PGE样转运。还研究了电子密度梯度上的非线性响应。在PGE样运输理论中考虑了电子散射的电子散射和库仑中心的各向同性过程。
Diffusion currents are theoretically examined in two-dimensional Dirac materials, such as those of the transition metal dichalcogenides (TMD) family. The transversal effects are analogues of the valley Hall (VHE) and photogalvanic (PGE) transport phenomena in case when the electron driving force is not an electric field but a gradient of electron density distribution in the sample. The latter can be created by a finite-sized laser spot or by the injection of electrons from other materials. We develop the theory of diffusive VHE effect assuming the anisotropic electron-short-range-impurity skew scattering. The electron PGE-like transport caused by higher electron-density derivatives is analyzed assuming the trigonal warping anisotropy of electron valleys in a TMD monolayer. The nonlinear responses on electron-density gradient are studied as well. The isotropic processes of electron scattering off the short-range and Coulomb centers are taken into account in the PGE-like transport theory.
