论文标题
墨西哥奶油剂纳米晶中电子和孔的有效兰德因子
Effective Landé factors of electrons and holes in lead chalcogenide nanocrystals
论文作者
论文摘要
固态系统中电荷载体的Landé或G因子提供了有关量子状态对外部磁场的响应的宝贵信息，并且是描述纳米结构中自旋依赖性现象的关键成分。我们报告了果胶源纳米晶体中电子和孔G因子的全面理论分析。通过将对称分析，原子计算和扩展的K.P理论相结合，我们将纳米晶体中限制的电子状态的计算的线性磁场能量分裂与多谷Lley散装材料的Intravalley G因子的线性磁场能量分裂相关联，由于量子约束而重新占据。我们证明，通过扩展K.P模型的框架中得出的分析表达式正确重现了这种重新规定。
The Landé or g-factors of charge carriers in solid state systems provide invaluable information about response of quantum states to external magnetic fields and are key ingredients in description of spin-dependent phenomena in nanostructures. We report on the comprehensive theoretical analysis of electron and hole g-factors in lead chalcogenide nanocrystals. By combining symmetry analysis, atomistic calculations, and extended k.p theory, we relate calculated linear-in-magnetic field energy splittings of confined electron states in nanocrystals to the intravalley g-factors of the multi-valley bulk materials, renormalized due to the quantum confinement. We demonstrate that this renormalization is correctly reproduced by analytical expressions derived in the framework of the extended k.p model.
