论文标题
三维拓扑绝缘子中表面状态的磁性校正量的量子校正
Quantum corrections to the magnetoconductivity of surface states in three-dimensional topological insulators
论文作者
论文摘要
量子干扰，电子 - 电子相互作用（EEI）和无序之间的相互作用是凝结物理学的中心主题之一。这种相互作用会在半导体（SOC）的半导体中引起高阶磁性（MC）校正。然而，尚未探讨如何通过符号对称性类的电子系统中的高阶量子校正来修饰磁转运性能，其中包括拓扑绝缘器（TIS），Weyl Semimetals，具有可忽略不计的间隔散射的石墨烯以及具有强SOC的半导体。在这里，我们将量子电导校正的理论扩展到具有符号对称性的二维电子系统，并使用双门控的TI设备进行实验研究，其中传输由高度可调的表面状态支配。我们发现，与抑制正交对称性的系统的MC相比，二阶干扰和EEI效应可以显着增强MC。我们的工作表明，详细的MC分析可以深入了解TIS中的复杂电子过程，例如局部电荷水坑的筛选和逐步效应，以及相关的颗粒孔不对称。
The interplay between quantum interference, electron-electron interaction (EEI), and disorder is one of the central themes of condensed matter physics. Such interplay can cause high-order magnetoconductance (MC) corrections in semiconductors with weak spin-orbit coupling (SOC). However, it remains unexplored how the magnetotransport properties are modified by the high-order quantum corrections in the electron systems of symplectic symmetry class, which include topological insulators (TIs), Weyl semimetals, graphene with negligible intervalley scattering, and semiconductors with strong SOC. Here, we extend the theory of quantum conductance corrections to two-dimensional electron systems with the symplectic symmetry, and study experimentally such physics with dual-gated TI devices in which the transport is dominated by highly tunable surface states. We find that the MC can be enhanced significantly by the second-order interference and the EEI effects, in contrast to suppression of MC for the systems with orthogonal symmetry. Our work reveals that detailed MC analysis can provide deep insights into the complex electronic processes in TIs, such as the screening and dephasing effects of localized charge puddles, as well as the related particle-hole asymmetry.
