论文标题

由于居民电荷的自旋填充而引起的共振拉曼散射理论和钙钛矿半导体中的激子

Theory of resonant Raman scattering due to spin-flips of resident charge carries and excitons in perovskite semiconductors

论文作者

Rodina, A. V., Ivchenko, E. L.

论文摘要

我们已经开发了一种拉曼散射理论,其局部驻留电子和孔的单个和双自旋挡以及在共振激发区域的光激发下,在半导体钙钛矿晶体中的无序局部激子。已经研究了涉及局部激子,Biexcitons和激子极化子作为中间状态的散射机制,极性子是一种新机制,偏光子的自旋flip拉曼散射是一种新机制。派生的方程式以不变形式表示,允许一种用于分析散射效率对初始光和散射光的极化以及外部磁场方向的依赖性。

We have developed a theory of Raman scattering with single and double spin flips of localized resident electrons and holes as well as nonequilibrium localized excitons in semiconductor perovskite crystals under optical excitation in the resonant exciton region. Scattering mechanisms involving localized excitons, biexcitons and exciton polaritons as intermediate states has been examined, the spin-flip Raman scattering by polaritons being a novel mechanism. The derived equations are presented in the invariant form allowing one for the analysis of the dependence of scattering efficiency on the polarization of the initial and scattered light and on the orientation of the external magnetic field.

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