论文标题
结构失真诱导的dzyaloshinskii-moriya在单层CRI3中的相互作用在范德华异质结构
Structural distortion induced Dzyaloshinskii-Moriya interaction in monolayer CrI3 at van der Waals heterostructures
论文作者
论文摘要
Van der Waals（VDW）磁异质结构提供了灵活的方法来实现具有科学和实际意义的特定磁性。在这里，通过FirstPrinciples计算，我们通过构建CRI3/Metal VDW异质结构来预测强大的Dzyaloshinskii-Moriya相互作用（DMI）。底层机制归因于I原子的大型自旋轨道耦合（SOC），以及由层间相互作用引起的CRI3层中的结构变形。这与传统的方式不同的方式将磁性膜沉积在底物上生成DMI，其中DMI由层间杂交和大型底物所主导。此外，海森堡交换和磁各向异性都会显着调节，例如，海森堡交换在AU上几乎翻了一番（111），而面向外磁性在IR上增加了88％（111）。我们的工作可能会提供实验可访问的策略，以诱导VDW磁性材料中的DMI，这将有助于Spintronics设备的设计。
The van der Waals (vdW) magnetic heterostructures provide flexible ways to realize particular magnetic properties that possess both scientific and practical significance. Here, by firstprinciples calculation, we predict strong Dzyaloshinskii-Moriya interactions (DMIs) by constructing CrI3/Metal vdW heterostructures. The underlaying mechanisms are ascribed the large spin-orbital coupling (SOC) of the I atom and the structural distortion in CrI3 layer caused by interlayer interaction. This is different from the traditional way that deposit magnetic films on substrate to generate DMI, wherein DMI is dominated by interlayer hybridization and large SOC of substrates. In addition, both Heisenberg exchange and magnetic anisotropy are modulated dramatically, such as Heisenberg exchange is nearly doubled on Au(111), and the out-of-plane magnetism is enhanced by 88% on Ir(111). Our work may provide a experimentally accessible strategy to induce DMI in vdW magnetic materials, which will be helpful to the design of spintronics devices.
