论文标题
基于Sol-Gel氧化铝钝化层GFET的工艺产量和设备稳定性改进
Process Yield and Device Stability Improvement for Sol-gel Alumina Passivation layer based GFETs
论文作者
论文摘要
GFET设备的稳定性是一个主要问题，需要一个良好的钝化层。这里研究了低成本和低温溶胶氧化铝氧化层的GFET，其目标是提高设备的稳定性并实现高过程产量。探索了两种不同的摩尔性，为0.1 m和0.05 M探索了工艺稳定性。提取迁移率，陷阱电荷密度，最小电导率高原宽度和最小电导率等参数以比较设备的稳定性。结果表明，具有0.1 m的GFET由于通道区域后的裂纹形成而导致的过程产量有问题，那里的设备接近一半的设备正在工作，而且工作设备也不稳定，并且在一周的时间内非常快地降解。另一方面，基于0.05 m的Sol-Gel氧化铝样品在所有工作设备上展示了100 $ \％$工艺产量，并且观察到了两个多月的稳定行为。因此，我们为基于Sol-Gel氧化铝的钝化层提出了优化的过程配方，以实现GFET的最佳过程产量和设备稳定性。
The stability of GFET devices is a major problem and needs a good passivation layer for the same. Low cost and low-temperature sol-gel alumina passivation layer-based GFETs is studied here with the goals to improve stability of the device and achieve high process yield. The process yield and device stability are explored for two different molarities of 0.1 M and 0.05 M. The parameters like mobility, trap charge density, minimum conductivity plateau width and minimum conductivity are extracted to compare the stability of devices. The results indicate that GFETs with 0.1 M have problems of process yield due to crack formation in the channel region post-annealing, where close to half of the devices are working, and also working devices are are not stable and degrading very fast within a week's time. On the other hand, 0.05 M sol-gel Alumina-based sample exhibits 100$\%$ process yield with all working devices and observed stable behavior for more than two months. Hence we propose an optimized process recipe for a sol-gel Alumina-based passivation layer to achieve the best possible process yield and device stability for GFETs.
