论文标题
在半导体NB掺杂SRTIO3（100）表面上直接可视化和控制SROX分离
Direct visualization and control of SrOx segregation on semiconducting Nb doped SrTiO3 (100) surface
论文作者
论文摘要
我们研究了SROX如何通过空气退火在NB掺杂的SRTIO3（100）表面上分离。使用原子力和光发射电子显微镜，我们可以直接可视化形态和电子期随SROX分离的变化。 SROX岛的尺寸小于2微米米和1-5个单位细胞首先成核并以迷宫域模式生长。长时间退火后，SROX形成约10 nm厚的膜。我们表明，可以通过引入SRTIO3的表面误会角来控制域模式。另外，与SRTIO3相比，分离的SROX具有较低的工作函数。这些结果表明，SROX隔离的控制和可调性适用于在半导体基于SRTIO3的异质结构中设计新功能电子设备的设计。
We investigated how SrOx segregates on a Nb doped SrTiO3 (100) surface by in air annealing. Using atomic force and photoemission electron microscopes, we can directly visualize the morphology and the electronic phase changes with SrOx segregation. SrOx islands less than 2 micron meter in size and 1-5 unit cells thick nucleate first and grow in a labyrinth domain pattern. After prolonged annealing, SrOx forms a ~10 nm thick film. We show that the domain pattern can be controlled by introducing a surface miscut angle of SrTiO3. Additionally, the segregated SrOx has a lower work function, compared to that of SrTiO3. These results suggest that the control and tunability of SrOx segregation is applicable to the design of a new functional electronic devices in the semiconducting SrTiO3 based heterostructure.
