论文标题

Schottky电场诱导CD3AS2纳米菌的圆形光藻素效应

Schottky Electric Field Induced Circular Photogalvanic Effect in Cd3As2 Nanobelts

论文作者

Wang, Bob Minyu, Zhu, Yuqing, Travaglini, Henry Clark, Savrasov, Sergey Y., Yu, Dong

论文摘要

由于其晶体反转对称性,预计狄拉克半法将禁止圆形光钙效应(CPGE)的表现。在这里,我们报告了CD3AS2 Nanobelt场效应晶体管中CPGE的观察,当光激发集中在金属接触附近至室温至室温时。我们将CPGE归因于Schottky电场诱导的对称性破坏,这通过旋转光激发通过Spin-Momentum锁定导致光电流调制。该假设得到了一套实验套件的支持,包括空间和角度分辨的螺旋性依赖性光电流,开尔文探针力显微镜和栅极电压依赖性。第一原理计算证实了在场引起的结构失真时的拓扑相变。这项工作提供了有关狄拉克材料中电气依赖性光电子的关键见解。

Dirac semimetals are expected to forbid the manifestation of the circular photogalvanic effect (CPGE) because of their crystal inversion symmetry. Here, we report the observation of the CPGE in Cd3As2 nanobelt field effect transistors, when the photoexcitation is focused in the vicinity of the metal contacts up to room temperature. We attribute the CPGE to the Schottky electric field induced symmetry breaking, which results in the photocurrent modulation by circularly polarized photoexcitation via spin-momentum locking. The hypothesis is supported by a suite of experiments including spatially and angularly resolved helicity dependent photocurrent, Kelvin probe force microscopy, and gate voltage dependence. First principles calculations confirmed a topological phase transition upon field induced structural distortion. This work provides key insights on the electrically controlled helicity dependent optoelectronics in Dirac materials.

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