论文标题
二维原子尺度超薄外侧异质结构
Two-dimensional atomic-scale ultrathin lateral heterostructures
论文作者
论文摘要
单层MOS2和WS2的Ultrathin侧向异质结构已通过金属有机化学蒸气沉积法成功实现。原子分辨率HAADF-STEM观察结果表明，外侧异质结构的连接宽度从几种纳米到单原子厚度，理论上是最薄的异质结。界面在原子上是平坦的，MOS2和WS2之间的混合最小，源自源供应的快速和突然切换。由于一维接口和旋转对称性破裂，所得的超薄侧面异质结构（1〜2）混合维度可以显示出紧急的光学/电子特性。在这项工作中发展的MOCVD增长使我们能够访问各种超薄的侧面异质结构，从而导致将来仅在每个组件中就对它们的新兴特性进行了探索。
Ultrathin lateral heterostructures of monolayer MoS2 and WS2 have successfully been realized with the metal-organic chemical vapor deposition method. Atomic-resolution HAADF-STEM observations have revealed that the junction widths of lateral heterostructures range from several nanometers to single-atom thickness, the thinnest heterojunction in theory. The interfaces are atomically flat with minimal mixing between MoS2 and WS2, originating from rapid and abrupt switching of the source supply. Due to one-dimensional interfaces and broken rotational symmetry, the resulting ultrathin lateral heterostructures, 1~2 mixed-dimensional structures, can show emergent optical/electronic properties. The MOCVD growth developed in this work allows us to access various ultrathin lateral heterostructures, leading to future exploration of their emergent properties absent in each component alone.
