论文标题
Picsecond Avalanche检测器概念验证原型的testbeam结果
Testbeam Results of the Picosecond Avalanche Detector Proof-Of-Concept Prototype
论文作者
论文摘要
Picsecond Avalanche检测器的概念验证原型是一种在传感器耗尽区域深处连续增益层的多PN连接整体硅检测器，在CERN SPS上的180 GEV pions进行了测试。该原型具有低噪声和快速的SIGE BICMOS前端电子设备和100μm螺距的六角形像素。在125 V的传感器偏置电压下，检测器在整个像素区域的平均效率和平均时间分辨率分别为0.4、0.9和2.7 w/cm^2的功耗。在第一个原型中，时间分辨率显着取决于从像素的中心的距离，以最高功耗在像素中心的13 ps和像素间区域的25 ps之间变化。
The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 μm pitch. At a sensor bias voltage of 125 V, the detector provides full efficiency and average time resolution of 30, 25 and 17 ps in the overall pixel area for a power consumption of 0.4, 0.9 and 2.7 W/cm^2, respectively. In this first prototype the time resolution depends significantly on the distance from the center of the pixel, varying at the highest power consumption measured between 13 ps at the center of the pixel and 25 ps in the inter-pixel region.
