论文标题
pfaffian分数量子厅效应中的Andreev样反射
Andreev-like Reflection in the Pfaffian Fractional Quantum Hall Effect
论文作者
论文摘要
我们研究了Pfaffian分数量子厅的边缘和整数量子厅州的隧道运输。基于强隧道和弱隧道之间的二重性论点，我们发现在强大的隧道制度中出现了类似Andreev的反射。我们计算了低压极限的弱且强的隧穿机制中的电荷电导。在较弱的隧道限制中，$ di}/dv $与$ v^{1/ν} $与偏置电压$ v $和$ν= 1/2 $成比例。相比之下，在强的隧道限制中，$ di/dv $由$（e^{2}/h）2ν/（1+ν）$表示，具有更正项。我们希望可以在$ν= 5/2 $的分数量子厅状态与$ν= 3 $之间的分数量子厅状态与整数量子厅状态之间的点接触中实现实验实现。
We studied the tunnel transport between the edge of a Pfaffian fractional quantum Hall state and that of an integer quantum Hall state. Based on the duality argument between the strong and weak tunnelings, we found that an Andreev-like reflection appeared in the strong tunneling regime. We calculated the charge conductance in the weak and strong tunneling regimes for the low-voltage limit. In the weak tunneling limit, $dI}/dV$ was proportional to $V^{1/ν}$ with bias voltage $V$ and $ν=1/2$. By contrast, in the strong tunneling limit, $dI/dV$ was expressed by $(e^{2}/h)2ν/(1+ν)$ with a correction term. We expect that this condition can be realized experimentally at the point contact between a fractional quantum Hall state with $ν=5/2$ and an integer quantum Hall state with $ν=3$.
