论文标题
使用自旋轨道扭矩（SOT）MRAM执行状态逻辑
Performing Stateful Logic Using Spin-Orbit Torque (SOT) MRAM
论文作者
论文摘要
状态逻辑是一种有前途的内存处理（PIM）范式，可以使用新兴的非挥发记忆单元进行逻辑操作。迄今为止，大多数状态逻辑电路都集中在电阻RAM等技术上，但我们提出了两种使用旋转轨道扭矩（SOT）MRAM设计状态逻辑的方法。第一种方法利用SOT设备中读写路径的分离来执行逻辑操作。与以前的工作相反，我们的方法利用标准内存结构，每行都可以用作输入或输出。第二种方法使用电压门控SOT切换来允许在密集的内存数组中进行状态逻辑。我们提出了数组结构，以支持两种方法并在存在过程变化和设备不匹配的情况下使用香料模拟评估它们的功能。
Stateful logic is a promising processing-in-memory (PIM) paradigm to perform logic operations using emerging nonvolatile memory cells. While most stateful logic circuits to date focused on technologies such as resistive RAM, we propose two approaches to designing stateful logic using spin orbit torque (SOT) MRAM. The first approach utilizes the separation of read and write paths in SOT devices to perform logic operations. In contrast to previous work, our method utilizes a standard memory structure, and each row can be used as input or output. The second approach uses voltage-gated SOT switching to allow stateful logic in denser memory arrays. We present array structures to support the two approaches and evaluate their functionality using SPICE simulations in the presence of process variation and device mismatch.
