论文标题
局部磁矩对频谱特性的影响以及在相互作用和掺杂诱导的Mott Transition附近的电阻率
The effect of local magnetic moments on spectral properties and resistivity near the interaction- and doping induced Mott transitions
论文作者
论文摘要
我们研究了局部磁矩的形成和筛选对金属 - 绝缘体过渡附近光谱函数温度和相互作用依赖性的影响。我们将动态均值场理论用于密切相关的哈伯德模型，并将上述属性的特殊性与针对局部电荷$χ_c$和spin $χ_s$敏感性的特性相关联。我们表明，在一半时填充一定温度下的电阻率的最大值$ t^*$对应于光谱函数的中央准粒子峰的出现，并使用明确定义的费米子准粒子进入金属态度。同时，通过筛选局部磁矩的筛选，由最少双重职业确定的元素筛选的温度小于温度尺度$ t^*$，并且与边界$ t_ {β= 1}（u）$相吻合，对应于电阻率$β\ equiv d \ equiv d \ equiv d \ equiv d \ equiv d \ equiv d \ equiv d \ ln p/d d = 1 $ \ ln T = 1 $ \ ln T = 1 = 1 = 1 = 1。远离一半填充，我们发现局部磁矩的筛选（即近代温度）的开始和完成的温度的较弱，而未筛定的局部磁矩只有多达几个掺杂的渗透率。在低温状态下，$ t <t <t_ {β= 1} $同时存在巡回和局部自由度，几乎产生了散射速率和电阻率的线性温度依赖性。
We study the effect of the formation and screening of local magnetic moments on the temperature- and interaction dependencies of spectral functions and resistivity in the vicinity of the metal-insulator transition. We use the dynamical mean-field theory for the strongly correlated Hubbard model and associate the peculiarities of the above mentioned properties with those found for the local charge $χ_c$ and spin $χ_s$ susceptibilities. We show that at half filling the maximum of resistivity at a certain temperature $T^*$ corresponds to the appearance of central quasiparticle peak of the spectral function and entering the metallic regime with well defined fermionic quasiparticles. At the same time, the temperature of the crossover to the regime with screening of local magnetic moments, determined by the minimum of double occupation, is smaller than the temperature scale $T^*$ and coincides at half filling with the boundary $T_{β=1}(U)$ corresponding to the exponent of resistivity $β\equiv d\ln ρ/d\ln T=1$. Away from half filling we find weak increase of the temperature of the beginning and completion of the screening (i.e. Kondo temperature) of local magnetic moments, while the unscreened local magnetic moments exist only up to few percents of doping. In the low temperature regime $T<T_{β=1}$ simultaneous presence of itinerant and localized degrees of freedom yields almost linear temperature dependence of scattering rate and resistivity.
