论文标题
（$ d $+1）中的手性边缘电流的增强 - 维原子莫特 - 波斯杂种混合绝缘子
Enhancement of chiral edge currents in ($d$+1)-dimensional atomic Mott-band hybrid insulators
论文作者
论文摘要
我们考虑了局部互斥对合成异质结构的影响，在$ SU（N）$ - 对称的二维晶格系统之上，Raman过程创建了离散的合成维度。在每个位置的一个费用填充时，增加了相互作用强度，该系统被驱动到与带绝缘子的绝热连接的Mott状态。与合成磁场相关的手性电流一直延伸到莫特过渡，在那里它们达到最大值，并且在整个绝缘状态下它们保持有限。向Mott-Band绝缘子向Mott-Band绝缘子的过渡与在低能量准颗粒峰内的间隙开放有关，而在绝缘状态下，平均场景恢复了深度。
We consider the effect of a local interatomic repulsion on synthetic heterostructures where a discrete synthetic dimension is created by Raman processes on top of $SU(N)$-symmetric two-dimensional lattice systems. At a filling of one fermion per site, increasing the interaction strength, the system is driven towards a Mott state which is adiabatically connected to a band insulator. The chiral currents associated with the synthetic magnetic field increase all the way to the Mott transition, where they reach the maximum value, and they remain finite in the whole insulating state. The transition towards the Mott-band insulator is associated with the opening of a gap within the low-energy quasiparticle peak, while a mean-field picture is recovered deep in the insulating state.
