论文标题
p-（bi，sb）的导热率$ _ {2} $ te $ _ {3} $
Thermal conductivity for p-(Bi, Sb)$_{2}$Te$_{3}$ films of topological insulators
论文作者
论文摘要
在拓扑绝缘体P-Bi $ _ {0.5} $ sb $ _ {1.5} $ _ {1.5} $ _ {3} $ {3} $和p-bi $ _ {2} $ _ {2} $ te $ _ {3} $ _ {3} $ by iNCTAL FYMETED和THERMAL FODESS中。 The largest decrease in the lattice thermal conductivity owing to the scattering of long-wavelength phonons on the grain interfaces was observed in the films of solid solutions p-Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ deposited by discrete evaporation on the amorphous substrates of polyimide without thermal treatment.结果表明，在p-bi $ _ {0.5} $ sb $ _ {1.5} $ te $ _ {3} $胶片具有低导热性的胶片中，放松时间的能量依赖性得到了增强，这是针对拓扑绝缘子的特定的。考虑到在松弛时间近似中的有效散射参数与洛伦兹数量计算中的能量中，确定了电子热导率。在40-80 K的温度范围内观察到的电子导热率的增加与电导率温度依赖性的减弱有关，并且由于散射对点抗溶剂和杂质缺陷的影响而在低温下的有效散射参数的增加确定。在研究膜中，导热率和层间表面形态（0001）的形态特征之间建立了相关性。
The temperature dependences of the total, crystal lattice and electronic thermal conductivities were investigated in films of topological insulators p-Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ and p-Bi$_{2}$Te$_{3}$ formed by discrete and thermal evaporation methods. The largest decrease in the lattice thermal conductivity owing to the scattering of long-wavelength phonons on the grain interfaces was observed in the films of solid solutions p-Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ deposited by discrete evaporation on the amorphous substrates of polyimide without thermal treatment. It is shown that in the p-Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ films with low thermal conductivity the energy dependence of the relaxation time is enhanced, which is specific for the topological insulators. The electronic thermal conductivity was determined taking into account the effective scattering parameter in the relaxation time approximation versus energy in the Lorentz number calculations. The observed increase of the electronic thermal conductivity within the temperature range of 40 - 80 K is related to the weakening of the electrical conductivity temperature dependence and is determined by the increase in the effective scattering parameter at low temperatures due to the effect of scattering on the point antisite and impurity defects. A correlation was established between the thermal conductivity and features of the morphology of the interlayer surface (0001) in the studied films.
