论文标题

高响应性MOS $ _2 $热电子电信波段光电探测器与微孔谐振器集成

High-responsivity MoS$_2$ hot-electron telecom-band photodetector integrated with microring resonator

论文作者

Zhang, Qiao, Ji, Yingke, Hu, Siqi, Li, Zhiwen, Li, Chen, Gu, Linpeng, Tian, Ruijuan, Zhang, Jiachen, Fang, Liang, Zhao, Bijun, Zhao, Jianlin, Gan, Xuetao

论文摘要

我们报告了基于Au-mos $ _2 $ _2 $连接与氮化硅微孔谐振器(MRR)的集成基于用于检测电信波段光线的高响应性热电子光电探测器。硝化硅MRR与Au-Mos $ _2 $ Schottky交界处区域的Evanevancent Fielt耦合提高了热电子注入效率。该设备在1516 nm的波长下表现出154.6 mA W-1的高响应性,并且在1500 nm-1630 nm的波长范围内获得了中等均匀的疾病。此MRR增强的MOS2热电子光电探测器为集成光电系统提供了可能性。

We report a high-responsive hot-electron photodetector based on the integration of an Au-MoS$_2$ junction with a silicon nitride microring resonator (MRR) for detecting telecom-band light. The coupling of the evanescent field of the silicon nitride MRR with the Au-MoS$_2$ Schottky junction region enhances the hot-electron injection efficiency. The device exhibits a high responsivity of 154.6 mA W-1 at the wavelength of 1516 nm, and the moderately uniform responsivities are obtained over the wavelength range of 1500 nm-1630 nm. This MRR-enhanced MoS2 hot-electron photodetector offers possibilities for integrated optoelectronic systems.

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