论文标题
通过自旋噪声光谱法揭示N掺杂的Ingaas表层中的电子核自旋动力学
Unveiling the electron-nuclear spin dynamics in an n-doped InGaAs epilayer by spin noise spectroscopy
论文作者
论文摘要
我们讨论了由于菌株引起的四型四极效应而导致的电子和核旋转弛豫的较小依赖含量（3％）的含义。使用弱扰动的自旋噪声光谱法，我们研究了电子自旋弛豫动力学，而无需显式激发。观察到的温度依赖性表明存在局部状态，这些状态与周围核自旋的相互作用增加。然后，应用时间分辨的自旋光谱法来研究光泵的核旋转系统的弛豫动力学。它显示了具有时间成分的多指数衰减，范围从几秒钟到数百秒不等。此外，我们提供了核自旋之间作用的局部磁场的测量，并发现了四极效应的强大贡献。最后，我们采用核自旋扩散模型，使我们能够估计局部载体状态的浓度并确定该系统的核自旋扩散常数特征。
We discuss the implications of a small indium content (3%) in a GaAs epilayer on the electron- and nuclear-spin relaxation due to enhanced quadrupolar effects induced by the strain. Using the weakly perturbative spin-noise spectroscopy, we study the electron-spin relaxation dynamics without explicit excitation. The observed temperature dependence indicates the presence of localized states, which have an increased interaction with the surrounding nuclear spins. Time-resolved spin-noise spectroscopy is then applied to study the relaxation dynamics of the optically pumped nuclear-spin system. It shows a multi-exponential decay with time components, ranging from several seconds to hundreds of seconds. Further, we provide a measurement of the local magnetic field acting between the nuclear spins and discover a strong contribution of quadrupole effects. Finally, we apply the nuclear spin diffusion model, that allows us to estimate the concentration of the localized carrier states and to determine the nuclear spin diffusion constant characteristic for this system.
