论文标题
基于门的带孔量子点的旋转读数，与网站依赖性$ g- $因子
Gate-based spin readout of hole quantum dots with site-dependent $g-$factors
论文作者
论文摘要
第四组半导体中孔自旋矩的快速进展是由它们的可伸缩性的潜力驱动的。这归功于与工业制造标准的兼容性，以及通过全电动驱动器的操作和可寻址性的兼容性。但是，由于强烈的自旋轨道相互作用，这些系统在关键量子控制参数（例如landé$ g-$ factor）中呈现可变性和各向异性，需要仔细表征可靠的量子操作。在这里，我们通过使用基于栅极的反射仪进行旋转读数来实验研究硅中的孔双量子点。我们表明，磁光谱引起的反射相信号中的特征特征传达了有关两个点中依赖于现场的$ g- $因子的信息。使用分析建模，我们提取系统的物理参数，并通过数值计算扩展结果，以指出从反射测量测量值中方便地提取有关局部$ g- $因子的信息的前景。
The rapid progress of hole spin qubits in group IV semiconductors has been driven by their potential for scalability. This is owed to the compatibility with industrial manufacturing standards, as well as the ease of operation and addressability via all-electric drives. However, owing to a strong spin-orbit interaction, these systems present variability and anisotropy in key qubit control parameters such as the Landé $g-$factor, requiring careful characterisation for reliable qubit operation. Here, we experimentally investigate a hole double quantum dot in silicon by carrying out spin readout with gate-based reflectometry. We show that characteristic features in the reflected phase signal arising from magneto-spectroscopy convey information on site-dependent $g-$factors in the two dots. Using analytical modeling, we extract the physical parameters of our system and, through numerical calculations, we extend the results to point out the prospect of conveniently extracting information about the local $g-$factors from reflectometry measurements.
