论文标题
GAAS底物上的近表面Inas 2DEG：表征和超导接近效应
Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect
论文作者
论文摘要
我们已经研究了基于GAAS基板上的INAS量子孔的近表面二维电子气体。在没有介电层的设备中，我们估计了$ 10^5 $ cm $^2 $/vs的订单的大型电子迁移率。我们已经观察到量子点接触中的量化电导率，并确定了G因子。使用带有外延层的样品，我们定义了多个约瑟夫森连接，发现临界电流可调节。基于多个Andreev反射，半导体 - 驱动器界面是透明的，诱导间隙为125 $μ$ eV。我们的结果表明，该平台用于混合拓扑超导体设备的生存能力。
We have studied a near-surface two-dimensional electron gas based on an InAs quantum well on a GaAs substrate. In devices without a dielectric layer we estimated large electron mobilities on the order of $10^5$ cm$^2$/Vs. We have observed quantized conductance in a quantum point contact, and determined the g-factor. Using samples with an epitaxial Al layer, we defined multiple Josephson junctions and found the critical current to be gate tunable. Based on multiple Andreev reflections the semiconductor-superconductor interface is transparent, with an induced gap of 125 $μ$eV. Our results demonstrate the viability of this platform for hybrid topological superconductor devices.
