论文标题
Picsecond Avalanche探测器 - 使用概念验证原型的工作原理和获得测量
Picosecond Avalanche Detector -- working principle and gain measurement with a proof-of-concept prototype
论文作者
论文摘要
Picsecond Avalanche检测器是基于$ \ MathRM {（NP）_ {Drift}（np）_ {gain}} $结构的多结硅像素检测器，该_ {drift}（np）_ {gain}} $结构设计为启用带电的托运跟踪，具有高空间分辨率和picoSecond Time-Time-time-pime-stamp stampability。它使用传感器体积内部深处的连续连接来扩增薄吸收层中电离辐射产生的主要电荷。然后，信号是由次要电荷在较厚的漂移区域内移动的。概念验证的整体原型由IHP微电子学的130 nm Sige BICMOS工艺制作，由IHP微电子制剂制作，由六角形像素的基质组成。在探测站上的测量以及$^{55} $ fe X射线来源表明，该原型是功能性的，并且显示雪崩的最大电子增益最大为23。对TCAD模拟所证实的雪崩特性的研究，由于x-rays $^rays of the fe fe fe fe fe fe ve fail tcad simutions corlobore fy tcad offeragence simulations corloborthe tcad simulations corloborthe coad offeragence simutions corloborthe fy tcad simulations corlage。
The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a $\mathrm{(NP)_{drift}(NP)_{gain}}$ structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses a continuous junction deep inside the sensor volume to amplify the primary charge produced by ionizing radiation in a thin absorption layer. The signal is then induced by the secondary charges moving inside a thicker drift region. A proof-of-concept monolithic prototype, consisting of a matrix of hexagonal pixels with 100 $μ$m pitch, has been produced using the 130 nm SiGe BiCMOS process by IHP microelectronics. Measurements on probe station and with a $^{55}$Fe X-ray source show that the prototype is functional and displays avalanche gain up to a maximum electron gain of 23. A study of the avalanche characteristics, corroborated by TCAD simulations, indicates that space-charge effects due to the large primary charge produced by the conversion of X-rays from the $^{55}$Fe source limits the effective gain.
