论文标题

由铁磁铁介导的电子杂交用重金属促进的石墨烯中的Rashba样旋转纹理

Rashba-like spin textures in Graphene promoted by ferromagnet-mediated Electronic-Hybridization with heavy metal

论文作者

Cano, Beatriz Muñiz, Gudín, Adrían, Sánchez-Barriga, Jaime, Clark, Oliver J., Anadón, Alberto, Díez, Jose Manuel, Olleros-Rodríguez, Pablo, Ajejas, Fernando, Arnay, Iciar, Jugovac, Matteo, Rault, Julien, Févre, Patrick Le, Bertran, François, Mazhjoo, Donya, Bihlmayer, Gustav, Blügel, Stefan, Miranda, Rodolfo, Camarero, Julio, Valbuena, Miguel Angel, Perna, Paolo

论文摘要

已经提出了沉积在重金属(HM)上的外延石墨烯/铁磁金属(GR/FM)异质结构,以实现新型的Spintronic设备,因为它们具有垂直的磁各向异性和较大的Dzyaloshinskii-Moriya相互作用(DMI),从而可以增强的稳定性和稳定性。但是,建立实现这一目标的途径需要对它们异常特性的微观起源的基本理解。在这里,我们阐明了IR上GR/CO界面处诱导的自旋轨道耦合(SOC)的性质。通过自旋和角度分辨的光发射以及密度功能理论,我们表明,通过与FM杂交与C原子层与C原子层的相互作用是GR层中强SO​​C的来源。此外,我们对GR下方的超薄CO膜的研究揭示了$ \ sim $ \,100 meV(可忽略不计)的面式内(平面外)旋转极化的Gr $π$π$π$π$π级频段,与GR/CO界面上的Rashba-Soc一致,这是fifferprint或dring dmi of of Origin的dmi。这种机制在较大的CO厚度下消失,在该机构中均未观察到平面内或平面外旋转轨道分裂,表明Gr $π$状态是从HM上以电子方式脱钩的。目前的发现对于Spintronic设备中基于GR的异质结构的未来应用至关重要。

Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals (HM) have been proposed for the realization of novel spintronic devices because of their perpendicular magnetic anisotropy and sizeable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes towards this goal requires the fundamental understanding of the microscopic origin of their unusual properties. Here, we elucidate the nature of the induced spin-orbit coupling (SOC) at Gr/Co interfaces on Ir. Through spin- and angle-resolved photoemission along with density functional theory, we show that the interaction of the HM with the C atomic layer via hybridization with the FM is the source of strong SOC in the Gr layer. Furthermore, our studies on ultrathin Co films underneath Gr reveal an energy splitting of $\sim$\,100 meV (negligible) for in-plane (out-of-plane) spin polarized Gr $π$ bands, consistent with a Rashba-SOC at the Gr/Co interface, which is either the fingerprint or the origin of the DMI. This mechanism vanishes at large Co thicknesses, where neither in-plane nor out-of-plane spin-orbit splitting is observed, indicating that Gr $π$ states are electronically decoupled from the HM. The present findings are important for future applications of Gr-based heterostructures in spintronic devices.

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