论文标题
一种超级巨星的方法，用于建模备忘录电流电压响应
A superstatistics approach to the modelling of memristor current-voltage responses
论文作者
论文摘要
预计，由于它们非常小的空间足迹和低功耗。由于其结构和操作的性质，回忆录的响应与设备中的局部变化本质上相关。当前采用的半导体制造过程会放大这种特征，该过程将空间不均匀性引入组成构成回忆录层的结构结构。在这项工作中，我们根据超级巨星框架提出了一个新颖的Q构造电流模型，用于回忆录，该模型允许对系统级响应的描述，同时考虑到局部变异。应用于基于AG-CU的突触记忆单元，我们证明了我们的模型比当前使用的模型低4-14％。此外，我们展示了如何使用所得的Q参数来制作有关Memristor的内部构成的陈述，从而深入了解空间不均匀性和质量控制。
Memristors are expected to form a major cornerstone in the upcoming renaissance of analog computing, owing to their very small spatial footprint and low power consumption. Due to the nature of their structure and operation, the response of a memristor is intrinsically tied to local variabilities in the device. This characteristic is amplified by currently employed semiconductor fabrication processes, which introduce spatial inhomogeneities into the structural fabric that makes up the layers of memristors. In this work, we propose a novel q-deformed current-voltage model for memristors based on the superstatistics framework, which allows the description of system-level responses while taking local variabilities into account. Applied on a Ag-Cu based synaptic memory cell, we demonstrate that our model has a 4-14% lower error than currently used models. Additionally, we show how the resulting q-parameter can be used to make statements about the internal makeup of the memristor, giving insights to spatial inhomogeneities and quality control.
