论文标题
原始和掺杂硫的TA $ _2 $ nise $ _5 $中的电子带结构
Electronic band structure in pristine and Sulfur-doped Ta$_2$NiSe$_5$
论文作者
论文摘要
我们提供了对激子绝缘子TA $ _2 $ nise $ _5 $的电子带结构的角度分辨光发性研究，以及其在硫掺杂时的演变。我们的实验数据表明，虽然激子绝缘阶段仍保留在25 $ \％$的硫掺杂水平上，但如果有大量量，$ \ sim $ 50 $ \％$在液态氮气温度下的S掺杂时，这种阶段会被大大抑制。此外，我们的光子能量依赖性测量结果揭示了电子结构的清晰三维，均以ta $ _2 $ _2 $ nise $ _5 $和ta $ _2 $ ni（se $ _ {1-x} $ s $ _x $ _x $）$ _ 5 $（$ _ 5 $（$ x = 0.25，0.25，0.50，0.50 $）化合物。这表明电导率和热导率的降低，这可能会使这些化合物不适合电子传输应用。
We present an angle-resolved photoemission study of the electronic band structure of the excitonic insulator Ta$_2$NiSe$_5$, as well as its evolution upon Sulfur doping. Our experimental data show that while the excitonic insulating phase is still preserved at a Sulfur-doping level of 25$\%$, such phase is heavily suppressed when there is a substantial amount, $\sim$ 50$\%$, of S-doping at liquid nitrogen temperatures. Moreover, our photon energy-dependent measurements reveal a clear three dimensionality of the electronic structure, both in Ta$_2$NiSe$_5$ and Ta$_2$Ni(Se$_{1-x}$S$_x$)$_5$ ($x=0.25, 0.50$) compounds. This suggests a reduction of electrical and thermal conductivities, which might make these compounds less suitable for electronic transport applications.
