论文标题
离子植入作为像素分离，用于制造平面应变平衡的基于锑的超晶格红外光电探测器
Ion-Implantation as Pixel Isolation for Fabrication of Planar Strain-Balanced Antimony-based Superlattice Infrared Photodetectors
论文作者
论文摘要
应变层超晶格（SLS）材料系统是一种动态且相对较新的红外检测材料。对不同应用的大格式，天线和低成本焦平面阵列（FPA）需要更多像素。对于当前的基于SLS的FPA介绍用于定义像素。对于那些具有缩放像素大小的基于SLS的FPA，由于需要深层蚀刻，然后是钝化过程，因此可以使台面结构变得具有挑战性。解决此问题的可能解决方案之一是考虑平面结构，避免使用膜 - 溶解或复杂的表面处理/钝化过程。在这项工作中，回顾了使用离子植入器进行隔离的平面SLS红外光电探测器的最新进展。在这种制造方法中，将离子植入从顶部到轰击的表面进行隔离，例如设备制造中的膜异化步骤。
Strained layer superlattice (SLS) material system is a dynamic and relatively new material for infrared detection. Large format, small-pitch and low-cost focal plane arrays (FPAs) with more pixels are in demand for different applications. For the current SLS based FPAs mesa etching are used to define the pixels. For those SLS based FPAs with scaled pixel size making the mesa structures can be challenging due to the need for deep etch, and then passivation process. One of the possible solutions to address this issue is to consider a planar structure and avoiding the mesa-isolation etching or complex surface treatment/ passivation process. In this work, the recent progress on planar SLS infrared photodetectors using ion-implantation for device isolation is reviewed. In this method of fabrication, ion implantation was applied from the top to bombardment the surface for device isolation, like mesa-isolation step in device fabrication.
