论文标题
$ inas/in（ga）中的量子限制的stark效应的测量为$量子点，带有p掺杂的量子点屏障
Measurement of the quantum-confined Stark effect in $InAs/In(Ga)As$ quantum dots with p-doped quantum dot barriers
论文作者
论文摘要
研究了使用非掺杂和P掺杂的QD屏障的INAS/IN（GA）中的量子限制的Stark效应作为量子点（QD），以比较其用于光学调节剂中的性能。测量结果表明，掺杂的QD屏障会导致更好的功绩$（FOM）$的数字，定义为反向偏置电压摆动与$ 1 V $ $ a $ a $α（1 v）$，$ fom =δα/α/α（1 V）的损失的吸收$Δα$的比例。改善的性能是由于缺乏基态吸收峰以及鲜明移位的额外成分。测量表明，与具有NID QD障碍的堆栈相比，在温度为-73 $°C至100 $°C的温度之间，FOM调制器的性能增加3 $ \ tims $可以提高FOM调制器性能。
The quantum-confined Stark effect in InAs/In(Ga)As quantum dots (QDs) using non-intentionally doped and p-doped QD barriers was investigated to compare their performance for use in optical modulators. The measurements indicate that the doped QD barriers lead to a better figure of merit $(FoM)$, defined as the ratio of the change in absorption $Δα$ for a reverse bias voltage swing to the loss at $1 V$ $α(1 V)$, $FoM=Δα/α(1 V)$. The improved performance is due to the absence of the ground-state absorption peak and an additional component to the Stark shift. Measurements indicate that p-doping the QD barriers can lead to more than a 3$\times$ increase in FoM modulator performance between temperatures of -73 $°$C to 100 $°$C when compared with the stack with NID QD barriers.
