论文标题
基于CMO的新兴RRAM技术的表征平台
A CMOS-based Characterisation Platform for Emerging RRAM Technologies
论文作者
论文摘要
新兴内存设备的质量表征是建模其在现有集成电路设计师标准设计流中集成的行为的重要步骤。这项工作为新兴的电阻设备提供了一个新颖的表征平台，其容量最高为100万个芯片。分为四个独立的子阵列，其中包含用于DUT快速电压编程的片上列平行的DAC。带有ADC的芯片读数电路也可用于快速读取操作，涵盖5个输入电流（20NA至2MA）。这允许设备的电阻范围在1K $ω$和1000万$ω$之间，设备上的最小电压范围为$ \ pm $ 1.5V。
Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform for emerging resistive devices with a capacity of up to 1 million devices on-chip. Split into four independent sub-arrays, it contains on-chip column-parallel DACs for fast voltage programming of the DUT. On-chip readout circuits with ADCs are also available for fast read operations covering 5-decades of input current (20nA to 2mA). This allows a device's resistance range to be between 1k$Ω$ and 10M$Ω$ with a minimum voltage range of $\pm$1.5V on the device.
