论文标题
Precision Beam望远镜基于SOI像素传感器技术,用于sub-GEV到GEV的能量范围
Precision beam telescope based on SOI pixel sensor technology for electrons in the energy range of sub-GeV to GeV
论文作者
论文摘要
我们开发了一个光束望远镜系统,该系统包括五层300- $ $ $ $ m-thick intpix4NA单片像素传感器,每个像素大小为17 $μm$ m正方形。传感器是使用硅在绝缘子(SOI)技术中制造的。 140--230的信噪比在20〜V的偏置电压下实现。使用200--822 MeV/c的正电子光束测试了跟踪器系统,并检查了各种跟踪方法,以优化在这些能量下可实现的空间精度。最佳跟踪精度,包括测试的传感器的精度为11.04 $ \ pm $ $ 0.10 $μ$ m,对于822-mev/c上的正值,对于等距传感器间距为32 mm。实现的精度结果与使用120 GEV质子获得的类似系统获得的内在空间分辨率值相结合,用于估计GEV能量范围内电子的跟踪性能;对于5-GEV电子,评估了2.22 $μ$ m的跟踪精度。使用基于GEANT4的模拟验证跟踪性能的方法。开发的高精度跟踪器系统使得像素尺寸为$ \ MATHCAL {O} $(10 $μ$ M)的传感器的详细性能,因此将是开发针对精确位置分辨率的设备的强大系统。
We developed a beam telescope system comprising five layers of 300-$μ$m-thick INTPIX4NA monolithic pixel sensors with each pixel size of 17 $μ$m square. The sensors were fabricated using silicon-on-insulator (SOI) technology. The signal-to-noise ratio of 140--230 is realized at a bias voltage of 20~V. The tracker system was tested using a positron beam of 200--822 MeV/c, and various tracking methods are examined to optimize spatial precision achievable at these energies. The best tracking precision including the precision of the sensor under test itself is 11.04 $\pm$ 0.10 $μ$m for 822-MeV/c positrons for an equidistant sensor spacing of 32 mm. The achieved precision results combined with the intrinsic spatial resolution value obtained for a similar system using 120 GeV protons are used to estimate the tracking performance of electrons in the GeV energy range; a tracking precision of 2.22 $μ$m is evaluated for 5-GeV electrons. The method to estimate the tracking performance is verified using a Geant4-based simulation. The developed high precision tracker system enables to map the detailed performance of the sensors with pixel sizes of $\mathcal{O}$(10 $μ$m), therefore will be a powerful system for development of devices targeting precision position resolutions.