论文标题
使用低温INP HEMT晶体管非线性挤压状态产生
Squeezed States Generation using Cryogenic InP HEMT Transistor Nonlinearity
论文作者
论文摘要
这项研究的重点是通过在低温温度下运行的INP HEMT晶体管结合两个外部振荡器来产生和操纵挤压状态。首先，使用量子理论分析高频下晶体管的小信号非线性模型，并理论上得出了相关的拉格朗日。随后，使用Legendre变换得出了系统的总量子哈密顿量。该系统的哈密顿量包括线性和非线性术语，通过研究对国家时间演变的影响。主要结果表明，由于晶体管的非线性，可以产生挤压状态，更重要的是，它可以通过非线性哈密顿量中引入的某些特定术语来操纵。实际上，晶体管的非线性诱导了某些效果，例如电容，电感和二阶跨导性，外部振荡器的特性会改变。这些变化可能导致对振荡器中挤压的参数挤压或操纵。另外，从理论上讲，电路可以生成两种模式挤压。最后，研究了二阶相关性（光子计数统计）作为互补任务，结果表明，设计的电路表现出抗激素，正交操作员在其中表现出挤压行为。
This study focuses on generating and manipulating squeezed states with two external oscillators coupled by an InP HEMT transistor operating at cryogenic temperatures. First, the small-signal nonlinear model of the transistor at high frequency at 5 K is analyzed using quantum theory, and the related Lagrangian is theoretically derived. Subsequently, the total quantum Hamiltonian of the system is derived using Legendre transformation. The Hamiltonian of the system includes linear and nonlinear terms, by which the effects on the time evolution of the states are studied. The main result shows that the squeezed state can be generated owing to the nonlinearity of the transistor, and more importantly, it can be manipulated by some specific terms introduced in the nonlinear Hamiltonian. In fact, the nonlinearity of the transistors induces some effects such as capacitance, inductance, and second-order transconductance, by which the properties of the external oscillators are changed. These changes may lead to squeezing or manipulation of the parameters related to squeezing in the oscillators. In addition, it is theoretically derived that the circuit can generate two-mode squeezing. Finally, second-order correlation (photon counting statistics) is studied as a complementary task, and the results demonstrate that the designed circuit exhibits antibunching, where the quadrature operator shows squeezing behavior.
