论文标题
研究超级-HVEV检测器中低能事件的来源
Investigating the sources of low-energy events in a SuperCDMS-HVeV detector
论文作者
论文摘要
最近搜索子GEV/$ C^2 $暗物质的实验观察到事件过剩，接近其各自的能量阈值。尽管特定于单个技术，但测得的过剩事件速率一直在几百eV的事件能量或以下报告，或者以几对电子孔对的指控。在目前的工作中，我们在整个晶体（0 V，60 V和100 V）的三个电压下操作了1克硅SuperCDMS-HVEV检测器。 0 V数据显示了EV区域数十亿个事件过多。尽管这一事件过多，但我们证明了对独立于自旋的暗物质设置竞争性排除限制的能力 - $ \ Mathcal {o}（100）$ MEV/$ C^2 $的暗物质弹性横截面。比较在整个晶体中0 V，60 V和100 V电势下获取的数据时，我们研究了在低能量下观察到的意外事件的可能来源。数据表明，对多余的主要贡献与检测器支架中使用的印刷电路板的假设发光一致。
Recent experiments searching for sub-GeV/$c^2$ dark matter have observed event excesses close to their respective energy thresholds. Although specific to the individual technologies, the measured excess event rates have been consistently reported at or below event energies of a few-hundred eV, or with charges of a few electron-hole pairs. In the present work, we operated a 1-gram silicon SuperCDMS-HVeV detector at three voltages across the crystal (0 V, 60 V and 100 V). The 0 V data show an excess of events in the tens of eV region. Despite this event excess, we demonstrate the ability to set a competitive exclusion limit on the spin-independent dark matter--nucleon elastic scattering cross section for dark matter masses of $\mathcal{O}(100)$ MeV/$c^2$, enabled by operation of the detector at 0 V potential and achievement of a very low $\mathcal{O}(10)$ eV threshold for nuclear recoils. Comparing the data acquired at 0 V, 60 V and 100 V potentials across the crystal, we investigated possible sources of the unexpected events observed at low energy. The data indicate that the dominant contribution to the excess is consistent with a hypothesized luminescence from the printed circuit boards used in the detector holder.
