论文标题
反应溅射的氮化锌氮化锌的化学状态分析：螺旋钻参数作为材料设计的工具
Chemical state analysis of reactively sputtered zinc vanadium nitride: The Auger parameter as a tool in materials design
论文作者
论文摘要
光电子光谱是开发新材料的重要工具。但是，特别是对于氮化物半导体，表面氧化物的形成，表面带弯曲以及缺乏合适的电荷参考通常会阻止强大的分析。在这里，我们使用Auger参数概念对Zn-V-N相空间进行了全面的化学状态分析，该概念对这种不确定性不太敏感。相岩Zn2Vn3，VN和Zn3N2样品在惰性气氛中转移后使用XPS/HAXPE分析。此外，对组合Zn1-XVXN薄膜文库进行了高通量化学态分析。 Zn1-XVXN中Zn Euger参数的演变与结构和功能特性的先前映射一致。令人惊讶的是，该研究揭示了与以前的高通量XRD筛选相比，Wurtzite Zn1-XVXN的稳定性范围更窄，突出了测量方法的敏感性。此处应用的过程可将其传输到许多其他材料系统，对于具有低结晶度的材料的高通量开发而言，XRD筛选的见解受到限制。
Photoelectron spectroscopy is an important tool for the development of new materials. However, especially for nitride semiconductors, the formation of surface oxides, surface band bending as well as the lack of a suitable charge reference often prevent a robust analysis. Here, we perform a comprehensive chemical state analysis of the Zn-V-N phase space using the Auger parameter concept, which is less sensitive to such uncertainties. Phase-pure Zn2VN3, VN, and Zn3N2 samples are analyzed using XPS/HAXPES after transfer in inert-gas atmosphere. In addition, high-throughput chemical state analysis is performed on combinatorial Zn1-xVxN thin film libraries. The evolution of the Zn Auger parameter in Zn1-xVxN is consistent with previous mapping of the structural and functional properties. Strikingly, the study reveals a narrower stability range of wurtzite Zn1-xVxN than our previous high-throughput XRD screening, highlighting the sensitivity of the measurement approach. The procedures applied here are transferable to many other material systems and could be particularly useful for the high-throughput development of materials with low crystallinity where insights from XRD screenings are limited.
