论文标题

$ C_3 $对称二维绝缘子的二阶拓扑丰度

Abundance of second order topology in $C_3$ symmetric two-dimensional insulators

论文作者

Sødequist, Joachim, Petralanda, Urko, Olsen, Thomas

论文摘要

我们已经筛选了71个二维(2D)材料,其中包括$ C_3 $对称的非平凡二阶拓扑顺序,并发现28种化合物表现出阻碍的原子极限(OAL)。在$ C_3 $对称性的情况下,可以根据散装对称指示器不变式计算二阶拓扑,该指示器可预测对称纳米片的对称性角度电荷的值。该过程在H期中被MOS $ _2 $举例说明,该过程构成了2D OAL材料的通用示例,并且通过直接计算带有扶手椅边缘的纳米板来验证预测的分数转角费用。我们还确定了散装拓扑极化,这总是导致锯齿形边缘处的无间隙状态,从而降低了纳米片的分数角电荷的概念,其锯齿形边缘通常比扶手椅片更稳定。然后,我们考虑了ticl $ _2 $的情况,它具有消失的极化以及OAL的消失,我们验证了带有锯齿形边缘的纳米片的边缘状态确实可以通过被钝化的钝化边缘,以使边缘保持绝缘并且角度费用得到很好的定义。对于28个OAL材料,我们发现16种具有消失的极化,因此这些材料构成了2D材料中二阶拓扑的实验验证的有希望的起点。

We have screened 71 two-dimensional (2D) materials with $C_3$ symmetry for non-trivial second order topological order and find that 28 compounds exhibit an obstructed atomic limit (OAL). In the case of $C_3$ symmetry, the second order topology can be calculated from bulk symmetry indicator invariants, which predict the value of fractional corner charges in symmetry conserving nanoflakes. The procedure is exemplified by MoS$_2$ in the H-phase, which constitutes a generic example of a 2D OAL material and the predicted fractional corner charges is verified by direct calculations of nanoflakes with armchair edges. We also determine the bulk topological polarization, which always lead to gapless states at zigzag edges and thus deteriorates the concept of fractional corner charges in nanoflakes with zigzag edges that are typically more stable that armchair flakes. We then consider the case of TiCl$_2$, which has vanishing polarization as well as an OAL and we verify that the edge states of nanoflakes with zigzag edges may indeed by passivated such that the edges remain insulating and the corner charges are well defined. For the 28 OAL materials we find that 16 have vanishing polarization and these materials thus constitute a promising starting point for experimental verification of second order topology in a 2D material.

扫码加入交流群

加入微信交流群

微信交流群二维码

扫码加入学术交流群,获取更多资源