论文标题
P扩散与高效细胞结构兼容后，UMG多晶晶片的高载体寿命
High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures
论文作者
论文摘要
高质量的多晶升级冶金级硅（UMG-SI）比常规多硅硅的PV技术具有显着优势，与较低的成本，较低的能源预算和较低的碳足迹相关。这项研究的目的是双重的：一方面，在载体寿命方面确定了基于该材料的太阳能电池的效率潜力；另一方面，为此，通过建立有效的后侧钝化方案来实施钝化的发射极后接触（PERC）设备，从而探索了高效细胞体系结构。在单次和双P扩散过程后，研究了载体寿命和表面钝化功效，以实现不同的钝化层构型。与使用参考参考碘乙醇（IE）钝化相比，由Al2O3，Sioxny和A-sinx：H封端叠加层组成的层堆栈已在工业大小，锯损伤的UMG晶片上进行了优化。基于少数族裔载体寿命和隐含VOC（IVOC）测量的诊断有助于监测参数优化对晶圆质量的影响，尤其是在启动过程之后。在10^15 cm-3的注射水平以及最多790 US的载体寿命已在UMG-SI Wafers中进行了磷酸化磷酸扩散后（PDG）的钝化（PDG），这证明了该材料对高效细胞建筑的适用性。用于GETERED UMG WAFER的基于AL2O3的钝化层获得了超过300个美国的值，该倍数为710 mV。这些创纪录的寿命和IVOC数字用P型多晶UMG-SI材料获得的材料通过行业可观的技术过程表明了其电子质量的显着升级。
High-quality multicrystalline Upgraded Metallurgical Grade Silicon (UMG-Si) offers significant advantages over conventional polysilicon-based PV technology, associated to lower cost, lower energy budget and lower carbon footprint. The aim of this study is twofold: on the one hand, to ascertain the efficiency potential of solar cells based on this material in terms of carrier lifetime; and on the other hand, to explore, as a result of that, the adoption of high-efficiency cell architectures by establishing an effective rear-side passivation scheme for the implementation of passivated emitter rear contact (PERC) devices. The carrier lifetime and the surface passivation efficacy are investigated for different passivating layer configurations after single and double P-diffusion gettering processes. Layer stacks consisting of Al2O3, SiOxNy and a-SiNx:H capping overlayers have been optimized, on industrial size, saw-damage-etched UMG wafers and results compared to those obtained using reference iodine-ethanol (IE) passivation. Diagnosis based on minority carrier lifetime and implied Voc (iVoc) measurements helped monitor the impact of parameter optimization on wafer quality, particularly after firing processes. Carrier lifetimes over 600 us at 10^15 cm-3 injection level as well as up to 790 us locally have been measured in UMG-Si wafers passivated with IE after a Phosphorus Diffusion Gettering (PDG), demonstrating the suitability of the material for high-efficiency cell architectures. Values higher than 300 us have been obtained with Al2O3-based passivation layers for gettered UMG wafers, with implied Voc values up to 710 mV. These record-breaking lifetimes and iVoc figures obtained with p-type multicrystalline UMG-Si material demonstrate a significant upgrading of its electronic quality by means of industry-scalable technical processes.
